TOKYO — Fabless startup Silicon7 Inc. said it has developed a one-transistor SRAM chip that can replace today's six-transistor SRAMs. The chip combines Silicon7's CompactCell SRAM (CCSRAM) technology ...
High yield achieved for the world's smallest level 6-transistor SRAM memory-cell area (0.494µm 2) ; stabilization technique addresses variability of transistor characteristics. Tokyo, June 15, 2006 −− ...
Imec and Unisantis, a developer of Surrounding Gate Transistor (SGT) semiconductor technology, have revealed significant progress in the development of a process flow targeting an SGT 6T-SRAM cell ...
Tokyo, June 12, 2007 −− Renesas Technology Corp. today announced the development of a technology that is effective in implementing SRAM in processes of the 32 nm (nanometer) generation and beyond, for ...
These are various forms of local, on-chip memory. Except for the DRAM. 4T (4 transistor) SRAM takes up 4 times the space that regular DRAM does 1T-SRAM seems to be a hybrid of DRAM that allows for ...
The Crolles2 Alliance, which includes Freescale Semiconductor, Philips and STMicroelectronics, has created six-transistor SRAM-bit cells with an area of less than 0.25 square microns, or about half ...
At today’s IEEE International Electron Devices Meeting in San Francisco, IMEC, Europe’s largest independent nanoeelctronics and nanotechnology research center, announced that it had achieved the ...
Cypress acquires ‘one transistor’ SRAM firmNews from ElectronicNews OnlineCypress Semiconductor today inked a deal to buy Cascade Semiconductor, a move that Cypress expects to add about $3m per ...
Fujitsu has demonstrated SRAM blocks down running down to 0.425V, using a deeply depleted channel (DDC) transistor design from Californian start-up SuVolta. By replacing conventional mosfets with DDC ...
MANHASSET, N.Y. — At the VLSI Circuits Symposium held recently in Kyoto, Japan, IBM scientists revealed a prototype embedded SRAM chip set capable of reaching speeds beyond 6 GHz. Their accomplishment ...
MANHASSET: The 55th annual International Electron Devices Meeting (IEDM) of IEEE will be held at the Hilton Baltimore on December 7-9, 2009. About 215 papers are to be presented by researchers from ...