EPC2366 eGaN® FET Wins EPDT 2025 Product of the Year Award

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Business Wire

EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 60 W, ...
Business Wire

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...
WTEN

EPC Announces New Benchmark for 100 V GaN Power Transistors

EPC launches EPC2367, a 100 V GaN FET with ultra-low on-resistance EPC launches EPC2367, a 100 V GaN FET with ultra-low 1.2 mΩ RDS(on), superior efficiency, and thermal performance, advancing AI, ...
Electronic Design

350-V GaN Transistor: 10X Smaller than Comparable Silicon and Lower Cost

Wide-bandgap (WBG) power electronics devices reduce component size, increase efficiency, and improve performance for hybrid and all-electric vehicles. In particular, gallium nitride’s (GaN) ...
Business Insider

Comparison and Cost Analysis Efficient Power Conversion Corporation's 2045 100V GaN-on-Silicon Transistor

The "EPC2045 100V GaN-on-Silicon Transistor: Comparison and Cost Analysis" report has been added to ResearchAndMarkets.com's offering. The low voltage GaN device market is increasingly important, and ...
KOIN 6

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

EL SEGUNDO, CA, USA, December 14, 2022 /EINPresswire.com/ -- Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN ...
VentureBeat

Gaming laptops will have smaller power supplies with EPC’s gallium nitride chips

Gamers may not care about the finer points of gallium nitride (GaN) chips as evangelized by power pioneer Alex Lidow, CEO of Efficient Power Conversion (EPC). But they will care that those chips will ...
Electronic Design

Monolithic GaN Power Transistor Half Bridge Operates Over 2 MHz, Ideal for Class-D Audio

EPC recently introduced the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. EPC recently introduced the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By ...
abc27

Micross Announces Global Distribution Partnership with EPC Space… Expands Rad-Hard Gallium Nitride (GaN) Power Device Offering

MELVILLE, N.Y., July 26, 2022 /PRNewswire/ -- Micross Components, Inc. ("Micross"), a leading global provider of mission-critical microelectronic components and services for high-reliability aerospace ...
EDN

EPC boasts new benchmark for 100-V GaN power transistors

Claiming a new benchmark for 100-V gallium-nitride (GaN) power transistors, Efficient Power Conversion (EPC) has introduced the EPC2367 100-V eGaN FET that delivers ultra-low on-resistance, higher ...