A review paper by scientists at Beijing Institute of Graphic Communication presented a thorough review of the existing ...
The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Just as its name implies, a floating-gate transistor’s driving terminal is electrically isolated from the rest of the device—that is, floating—so there is no direct internal dc path from the input ...
Low-voltage and low-power circuit structures are substantive for almost all mobile electronic gadgets which generally have mixed mode circuit structures embedded with analog sub-sections. Using the ...
The memory industry has crammed more and more memory bits onto ever smaller die and is selling those slivers of silicon for a few cents each. Currently, 1-Gbit and even 4-Gbit DRAMs (dynamic ...
OFET incorporating the CdSe quantum dot film used in this study. (Courtesy: J Jang) Photoresponsive flash memories made from organic field-effect transistors (OFETs) that can be quickly erased using ...
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