DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Rohm BSM180D12P3C007 Trench SiC MOSFET: Structure and Cost Analysis" report to their offering. The BSM180D12P3C007 is a ...
Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
For the electrification of cars to assist in achieving a decarbonized society, the development of more efficient, compact, and lightweight electric powertrain systems must continue to progress. And ...
Toshiba Electronics Europe has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. Credit: Toshiba Electronics Europe According to ...
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