Electronic Specifier

New high SOA MOSFET enables 48V hot-swapping in AI servers

The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...
Pulse Ghana

Ghanaian prodigy Tyrone Iras Marhguy engineers a “Computer Brain” at Penn

Ghanaian student Tyrone Iras Marhguy, now at the University of Pennsylvania, has built a working computer brain from scratch ...

EPC2366 eGaN® FET Wins EPDT 2025 Product of the Year Award

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Semiconductor Engineering

Multi-Die Assemblies Require More Detailed Test Plan Earlier

Understanding connectivity issues and interactions are only part of the problem; ECOs can cause unexpected problems in other ...
IEEE

Work Function Engineering to Improve Data Retention Due to Floating Body in 3-D GAA Stacked Nanosheet Based DRAM

Abstract: Following the pivotal success of 3-D NAND technology, which revolutionized flash memory, DRAM technology could similarly advance by adopting vertical stacking of memory cells, employing gate ...
IEEE

First Experimental Demonstration of Dual-Sided N/P FETs in Filp FET (FFET) on 300 mm Wafers for Stacked Transistor Technology in Sub-1nm Nodes

Abstract: For the first time, dual-sided devices in Flip FET (FEET) were successfully demonstrated on 300 mm wafers, on which the FFET's unique back-to-back stacking of frontside (FS) NFET and ...