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Abstract: The super junction (SJ) structure can optimize both the blocking capability and conduction performance of unipolar power semiconductor devices. However, constrained by the intrinsic material ...
Abstract: This paper investigates differences in the Single-Event Leakage Current (SELC) of planar-gate (PG) and asymmetric trench-gate (ATG) SiC MOSFETs under heavy ion irradiation. Experiment ...
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